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SOLUTION
Other tests
One: Common core tests on probe stations revolve around multi-physics environments and high-frequency/special electrical performance, with the key focus being to simulate real-world device operating conditions and precisely capture their characteristics.
1. High-Frequency/Radio Frequency (RF) Testing
The core focus is to measure the electrical behavior of semiconductor devices under high-frequency signals, thereby evaluating their high-frequency performance limits. By establishing high-frequency connections via microwave probes, key metrics such as S-parameters (reflection/transmission characteristics), gain, and noise figure can be obtained—critical indicators used to verify the performance of RF chips like amplifiers and filters.
2. High and Low Temperature (Thermal) Testing
The core focus is to simulate the operational behavior of analog devices under extreme temperature conditions, verifying their thermal stability and reliability. The probe station is placed inside a temperature-controlled chamber, allowing simultaneous electrical tests such as IV and CV measurements across a wide temperature range—from -196°C (liquid nitrogen) up to 300°C and beyond—to identify any temperature-related performance drifts or failures.
3. Stress Testing
The core idea is to accelerate device aging by applying external stress, thereby exposing potential reliability risks in advance. Common types of stress include electrical stress (such as constant voltage/current stress, used to test device lifespan) and mechanical stress (like probe pressure testing, which simulates the mechanical effects during packaging and actual use).
1. High-Frequency/Radio Frequency (RF) Testing
The core focus is to measure the electrical behavior of semiconductor devices under high-frequency signals, thereby evaluating their high-frequency performance limits. By establishing high-frequency connections via microwave probes, key metrics such as S-parameters (reflection/transmission characteristics), gain, and noise figure can be obtained—critical indicators used to verify the performance of RF chips like amplifiers and filters.
2. High and Low Temperature (Thermal) Testing
The core focus is to simulate the operational behavior of analog devices under extreme temperature conditions, verifying their thermal stability and reliability. The probe station is placed inside a temperature-controlled chamber, allowing simultaneous electrical tests such as IV and CV measurements across a wide temperature range—from -196°C (liquid nitrogen) up to 300°C and beyond—to identify any temperature-related performance drifts or failures.
3. Stress Testing
The core idea is to accelerate device aging by applying external stress, thereby exposing potential reliability risks in advance. Common types of stress include electrical stress (such as constant voltage/current stress, used to test device lifespan) and mechanical stress (like probe pressure testing, which simulates the mechanical effects during packaging and actual use).
At the heart of probe station testing, when paired with source meters and other equipment, lies the creation of a closed loop: "precise excitation—stable connection—accurate measurement." The source meter delivers controllable voltage/current stimuli, while the probe station ensures highly accurate electrical connections between the device under test and the instrument—ultimately enabling the capture of the device's electrical response characteristics.
2: Core Testing Equipment and Division of Responsibilities
1. Source Meter: The core "Stimulus + Measurement" unit, capable of precisely delivering voltage/current signals (stimulus) while simultaneously measuring the corresponding current/voltage values with high accuracy (response), directly enabling IV characteristic testing.
2. Capacitance Meter/LCR Meter: Used for CV characteristic testing, it outputs small AC signals to measure device parameters such as capacitance, inductance, and resistance, enabling analysis of the device's charge storage properties.
3. Probe Station: The core "connection" unit, it establishes a stable, low-noise electrical pathway by precisely contacting the device’s electrode pads with micrometer-level accurate probe tips—forming the foundation for testing tiny components.
4. Temperature Control System (Optional): If high- and low-temperature testing is required, the probe station can be integrated into a temperature-controlled chamber to simulate the actual operating temperature environment of the device.