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CT Non-Vacuum High- and Low-Temperature Probe Station
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CGO Series Vacuum High- and Low-Temperature Probe Station
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CRX Series Closed-Loop Vacuum High-Low Temperature Probe Station
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M001 Vacuum High- and Low-Temperature Probe Station
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M002 Vacuum High- and Low-Temperature Probe Station
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CRX-SM Low-Temperature Superconducting Vacuum Probe Station
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EMMI Photon Micro-Leakage Analysis Probe Station
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Solution
SOLUTION
Solution
Leveraging years of accumulated collaboration experience, Cindbest has transformed numerous technical insights into practical market solutions. Through continuous technological advancements, we’ve successfully empowered clients to optimize their testing processes, enabling more precise test measurements and outcomes.
The core of the probe station's IV/CV DC testing lies in establishing electrical connections via probes, enabling precise measurements of a semiconductor device's current-voltage (IV) and capacitance-voltage (CV) characteristics when used in conjunction with test instruments—ultimately helping to evaluate the device's performance and reliability.
At the heart of probe station optoelectronic testing lies the establishment of a closed-loop "light-electricity" conversion and detection system. By precisely controlling illumination conditions and ensuring stable electrical probe contact, the system measures the electrical response of optoelectronic devices under light excitation, enabling an assessment of their photoelectric conversion efficiency and overall performance.
At the heart of probe station laser repair testing lies precise defect localization and targeted restoration. Specifically, the process leverages the probe station’s high-precision positioning system—combined with optical observation tools like microscopes—to accurately identify defect locations on semiconductor devices. Once the defects are pinpointed, a laser beam is used to perform repair operations, such as melting and removing unwanted connections, fixing short circuits, adjusting resistance values, or depositing materials—ultimately restoring the device to its intended functionality.
The probe station Hall effect testing solution is a core technology for characterizing the electrical properties of semiconductor materials and devices. By integrating precision mechanical manipulation, stable magnetic field generation, accurate environmental control, and intelligent signal analysis, it enables non-destructive, high-precision measurements of critical parameters such as carrier concentration, mobility, and conductivity type.
At the heart of the probe station RF testing solution lies the ability to achieve precise RF signal transmission, distortion-free measurements, and system-level error calibration—all at the wafer level. By integrating advanced precision mechanics, high-frequency signal pathways, and intelligent calibration technologies, this solution effectively addresses critical challenges at high frequencies, such as skin effect, impedance mismatch, and parasitic interference. Ultimately, it enables the accurate extraction of key RF characteristics for the Device Under Test (DUT), including S-parameters, power levels, and phase information.
Silicon photonics testing, high-power device testing, high- and low-temperature vacuum testing, as well as high-voltage, high-current testing, and more.